| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF1405SPBF is a N-Channel power MOSFET from Infineon Technologies designed for high-current switching applications. It offers a drain-source breakdown voltage of 55V (minimum) and a continuous drain current of 131A at 25°C case temperature. The device achieves an ultra low on-resistance of 5.3 mOhm (maximum) at VGS=10V, enabling efficient power delivery.
The MOSFET is built with advanced HEXFET planar stripe technology, providing fast switching performance. Typical switching times include 13 ns turn-on delay, 190 ns rise time, 130 ns turn-off delay, and 110 ns fall time under specified test conditions. The gate charge characteristics include 170 nC (typical) total gate charge, enabling efficient gate drive design.
The device comes in a TO-263-3 D2PAK surface-mount package, supporting solder reflow assembly. It operates over a junction temperature range of -55°C to 175°C with a maximum power dissipation of 200W at 25°C case temperature. Thermal resistance is 0.75 °C/W junction-to-case and 40 °C/W junction-to-ambient. The device is qualified for industrial motor drive applications and is RoHS3 compliant.
55 V (minimum)
-55°C to 175°C
TO-263-3 (D2PAK), surface-mount
RoHS3 Compliant (unverified)
4.6 mOhm typical, 5.3 mOhm maximum at VGS=10V, ID=101A