| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,745 pcs
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8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF1405S is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-current switching applications and is available in a D2PAK (TO-263) surface-mount package.
This device features a 55V drain-to-source breakdown voltage and a continuous drain current rating of 131A at Tc=25°C (93A at Tc=100°C). On-resistance is exceptionally low, with a maximum Rds(on) of 5.3mΩ at Vgs=10V and typical values around 4.6mΩ. Total gate charge is 260nC maximum, allowing fast switching in high-frequency circuits.
The MOSFET is rated for 200W power dissipation at Tc=25°C and can operate over a junction temperature range of -55°C to 175°C. Its low thermal resistance (0.75°C/W junction-to-case) facilitates heat management in demanding applications. The device is suitable for industrial motor drives, power conversion, and other high-current switching circuits.
The IRF1405S is offered in the D2PAK (TO-263) surface-mount package, which provides good power dissipation for board-level designs. The gull-wing leads simplify soldering in automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 50+ | $3.50 | $3.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF1405S has a drain-source breakdown voltage of 55V.
It is available in a TO-263-3 D2PAK surface-mount package (D2PAK).
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant in the database, but this status is unverified.
The continuous drain current is 131A at Tc=25°C and 93A at Tc=100°C.
The maximum Rds(on) is 5.3mΩ at Vgs=10V, Id=101A; typical is 4.6mΩ.
The gate threshold voltage (Vgs(th)) is between 2V and 4V with Id=250µA at Vds=10V.