IRFBA1405PPBF
Vishay
The Vishay IRFBA1405PPBF is a HEXFET Power MOSFET featuring a 55V breakdown voltage and 5.0mΩ on-resistance. It is housed in a Super-220™ package.
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33,252 pcs
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33252 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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7,953 pcs
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7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRF1405PBF is an N-channel HEXFET Power MOSFET utilizing advanced Stripe Planar design for extremely low on-resistance per silicon area. This device is built for efficiency and reliability in various applications.
Key electrical characteristics include a 55V drain-to-source breakdown voltage (V(BR)DSS) and a maximum static drain-to-source on-resistance (RDS(on)) of 5.3mΩ at a gate-to-source voltage of 10V. It can handle a continuous drain current of up to 169A at 25°C case temperature and 118A at 100°C. The pulsed drain current (IDM) is rated at 680A, and power dissipation (PD) is 330W at 25°C.
This MOSFET operates within a junction temperature range of -55°C to +175°C. It features a gate-to-source voltage range of ±20V and a gate threshold voltage between 2.0V and 4.0V. The device also offers a forward transconductance of 69S and a drain-to-source leakage current (IDSS) of up to 250µA.
The IRF1405PBF is supplied in a TO-220AB package suitable for through-hole mounting. It is designed for applications such as industrial motor drives, benefiting from its fast switching speed and improved repetitive avalanche rating.
| Qty | Low | High |
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| 1+ | $2.77 | $2.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 169A at 25°C case temperature and 118A at 100°C case temperature.
The static drain-to-source on-resistance is a maximum of 5.3mΩ when the gate-to-source voltage is 10V.
The operating junction and storage temperature range is from -55°C to +175°C.
The IRF1405PBF is supplied in a TO-220AB package.
Yes, the IRF1405PBF is RoHS3 Compliant.