Mfr Part #:

IRF1404ZSTRLPBF

N-Channel MOSFET with 40V drain-source breakdown voltage and 180A continuous drain current. Features low on-resistance of 3.7 mOhm at 10V gate drive.

✓ Total Stock: 5,020 pcs

$ Price Range: $0.92 - $2.94

IRF1404ZSTRLPBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,220 pcs On Request	4220 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	800 pcs On Request	800 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IRF1404ZSTRLPBF Description

Short technical summary and product information.

The IRF1404ZSTRLPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-current switching applications. It features a drain-source breakdown voltage of 40 V and a continuous drain current rating of 180 A at case temperature.

With a maximum on-resistance of 3.7 mOhm at 75 A and 10 V gate drive, this MOSFET offers low conduction losses. The gate charge is 150 nC at 10 V, and input capacitance is 4340 pF at 25 V drain-source. The device can dissipate up to 200 W and operates over a junction temperature range of -55°C to 175°C.

The MOSFET is supplied in a surface-mount D2PAK (TO-263-3) package, specifically the PG-TO263-3 supplier device package. It is suitable for automated assembly and is RoHS3 compliant (unverified).

IRF1404ZSTRLPBF Quick Information

Product Type: MOSFET

Canonical Name: IRF1404ZSTRLPBF N-Channel Power MOSFET

Subcategory: N-Channel MOSFET

IRF1404ZSTRLPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

IRF1404ZSTRLPBF Estimated Pricing

Qty	Low	High
1+	$2.94	$2.94
10+	$1.89	$1.89
50+	$1.44	$1.44
100+	$1.22	$1.22
800+	$0.92	$0.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF1404ZSTRLPBF Features

N-Channel MOSFET with 40V drain-source breakdown voltage.
Continuous drain current rating of 180A at case temperature.
Low on-resistance of 3.7 mOhm at 75A and 10V gate drive.
Surface mount D2PAK package for automated assembly.
Wide operating temperature range from -55°C to 175°C.

IRF1404ZSTRLPBF Applications

Used in high-current DC-DC converter circuits.
Ideal for motor control and power management systems.
Suitable for automotive and industrial power applications.
Applied in battery protection and load switching.

IRF1404ZSTRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IRF1404ZSTRLPBF?

40 V minimum.

What is the maximum drain current rating?

180 A at case temperature.

What is the on-resistance of this MOSFET?

3.7 mOhm maximum at 75 A drain current and 10 V gate-source voltage.

What package does the IRF1404ZSTRLPBF come in?

Surface mount D2PAK (TO-263-3) package, supplier device package PG-TO263-3.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IRF1404ZSTRLPBF RoHS compliant?

RoHS3 compliant according to unverified data.

What is the gate charge of this MOSFET?

150 nC maximum at 10 V gate-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4340 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	PG-TO263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V