| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1404ZSPBF is an N-Channel power MOSFET from Infineon Technologies designed for high-current switching applications. It offers a maximum drain-to-source voltage of 40V and a continuous drain current of 180A at case temperature.
Key electrical characteristics include a maximum on-resistance of 3.7mOhm at Vgs=10V and Id=75A, a gate charge of 150nC at 10V, and an input capacitance of 4340pF at Vds=25V. The gate threshold voltage is 4V maximum at Id=150µA, and the gate-source voltage is rated at ±20V.
The device is housed in a TO-263-3 (D2PAK) surface-mount package with a maximum power dissipation of 200W at case temperature. It operates over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 279+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The maximum drain current is 180A at case temperature.
The maximum on-resistance is 3.7mOhm at Vgs=10V and Id=75A.
The junction temperature range is -55°C to 175°C.
It uses a TO-263-3 (D2PAK) surface-mount package.
The part is marked as RoHS3 compliant, but this status is unverified.
The maximum gate charge is 150nC at Vgs=10V.