| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,000 pcs
|
41000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation |
The Infineon IRF1404ZPBF is a HEXFET® Power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This device is designed for a wide variety of applications requiring high efficiency and reliability.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage of 40V and a Static Drain-to-Source On-Resistance as low as 2.7mΩ at a typical gate-to-source voltage of 10V. The continuous drain current is rated up to 180A at 25°C (silicon limited) and 120A at 100°C. The operating junction temperature range is -55°C to +175°C.
This MOSFET features a TO-220AB package suitable for through-hole mounting. Its design incorporates fast switching speeds and an improved repetitive avalanche rating, making it suitable for demanding power applications. The lead-free design aligns with modern environmental standards.
With its robust construction and high-performance specifications, the IRF1404ZPBF is an efficient and reliable component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 40V.
The typical RDS(on) is 2.7mΩ at VGS of 10V.
The maximum continuous drain current at 25°C is 180A.
It is supplied in a TO-220AB package.
The device operates within a temperature range of -55°C to +175°C.
Yes, it is RoHS3 compliant.