| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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276 pcs
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276 pcs | On Request | 1 | On Request | On Request | 932 | On Request | On Request |
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The IRF1404ZGPBF is a single N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It is designed for high-efficiency power conversion applications with a drain-to-source breakdown voltage of 40V minimum and continuous drain current of 75A (package limited at 25°C) or 480A silicon limited. The device offers ultra-low on-resistance (Rds(on)) with a typical value of 2.7 mΩ and maximum of 3.7 mΩ at VGS=10V, ID=75A.
Gate threshold voltage ranges from 2.0V to 4.0V at ID=250µA, with a maximum gate-source voltage of ±20V. Total gate charge is typically 100 nC (max 150 nC) at VGS=10V. The MOSFET features fast switching with typical turn-on delay of 18 ns, rise time of 110 ns, turn-off delay of 36 ns, and fall time of 58 ns.
Operating junction temperature range is -55°C to 175°C. Maximum power dissipation is 220W at case temperature 25°C. Thermal resistance junction-to-case is 0.65 °C/W maximum. The device is lead-free and halogen-free, compliant with RoHS3. It is packaged in a through-hole TO-220-3 (TO-220AB) package.
With its high current capability, low on-resistance, and fast switching, the IRF1404ZGPBF is suitable for power supply, DC-DC converter, motor control, and other power switching circuits that demand efficiency and reliability.
40V minimum at 25°C.
TO-220-3 (through-hole), also referred to as TO-220AB.
-55°C to 175°C (junction temperature).
Yes, it is RoHS3 compliant. This is inferred from lead-free and halogen-free designations in the datasheet.
Typical on-resistance is 2.7 mΩ, maximum is 3.7 mΩ at 75A drain current and 10V gate drive.
Minimum 2.0V, maximum 4.0V at drain current of 250 µA.
Package limited: 75A at 25°C case temperature; silicon limited: 480A at 25°C; de-rated to 320A at 100°C.