| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,220 pcs
|
4220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1404STRLPBF is an N-Channel power MOSFET from Infineon Technologies, part of the advanced HEXFET family. It is designed for high-efficiency power conversion and switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 40V, a continuous drain current of 162A at Tc=25°C, and a maximum static drain-to-source on-resistance of just 4.0 mOhm at Vgs=10V. The device also offers a pulsed drain current rating of 650A and a single pulse avalanche energy rating of 519 mJ, ensuring robust performance under transient conditions.
The IRF1404STRLPBF is housed in a surface-mount D2PAK (TO-263) package with a gull wing termination style. It supports an operating junction temperature range of -55°C to 175°C and has a maximum power dissipation of 200W at Tc=25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
| 10+ | $1.64 | $1.64 |
| 50+ | $1.25 | $1.25 |
| 100+ | $1.12 | $1.12 |
| 800+ | $0.85 | $0.85 |
| 2,400+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (Vdss) is 40V.
The continuous drain current is 162A at Tc=25°C and 115A at Tc=100°C.
The static drain-to-source on-resistance is typically 3.5 mOhm and maximum 4.0 mOhm at Vgs=10V, Id=95A.
It is available in a surface mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this information is unverified.
The gate threshold voltage ranges from 2.0V to 4.0V at Vds=Vgs, Id=250µA.