Mfr Part #:

IRF1404PBF

N-Channel power MOSFET with 40V drain-source voltage, 202A continuous drain current, and ultra-low on-resistance of 4mOhm max. Housed in a TO-220AB package for through-hole mounting.

✓ Total Stock: 400 pcs

$ Price Range: $0.86 - $2.47

IRF1404PBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	400 pcs On Request	400 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF1404PBF Description

Short technical summary and product information.

The IRF1404PBF is a seventh generation HEXFET power MOSFET from International Rectifier (now part of Infineon Technologies), utilizing advanced process technology to achieve ultra low on-resistance. It features a drain-source voltage rating of 40V and a continuous drain current of 202A at 25°C case temperature (143A at 100°C, 808A pulsed). The typical on-resistance is 3.5mΩ with a maximum of 4mΩ at Vgs=10V and Id=121A. Gate threshold voltage ranges from 2V to 4V. Total gate charge is 131nC typical (196nC maximum). Power dissipation is rated at 333W at 25°C case temperature. The device can operate over a junction temperature range of -55°C to 175°C. The TO-220AB through-hole package provides low thermal resistance (junction-to-case 0.45°C/W) and is suitable for power dissipation levels up to approximately 50 watts in commercial/industrial applications. The device is lead-free (verified per datasheet).

IRF1404PBF Quick Information

Product Type: Power MOSFET

Series: HEXFET

Canonical Name: IRF1404PBF

Subcategory: Single

IRF1404PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRF1404PBF Estimated Pricing

Qty	Low	High
1+	$2.47	$2.47
10+	$1.58	$1.58
50+	$1.20	$1.20
100+	$1.08	$1.08
500+	$0.86	$0.86

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF1404PBF Features

Ultra low on-resistance of 4mOhm maximum.
High continuous drain current of 202A at 25°C.
Wide operating temperature range -55°C to 175°C.
Fast switching with typical gate charge of 131nC.
Lead-free verified through-hole TO-220AB package.

IRF1404PBF Applications

High-efficiency power switching applications.
DC-DC converters and voltage regulator circuits.
Motor drive and power inverter designs.

IRF1404PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IRF1404PBF?

40V (minimum at VGS=0V, ID=250µA).

What is the package type of the IRF1404PBF?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the IRF1404PBF RoHS compliant?

RoHS3 compliant per product data, but compliance is unverified (low confidence). The device is verified lead-free from datasheet.

What is the typical on-resistance of the IRF1404PBF?

3.5mΩ typical, 4mΩ maximum at Vgs=10V, Id=121A.

What is the total gate charge?

131nC typical, 196nC maximum at Vds=32V, Vgs=10V, Id=121A.

What is the maximum continuous drain current?

202A at Tc=25°C, 143A at Tc=100°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	202 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	131nC (typ) / 196nC (max)
Input Capacitance (Ciss) (Max) @ Vds	5669 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	3.5mΩ (typ) / 4mΩ (max)
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V (min) / 4V (max)