| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon IRF135SA204 is an N-channel HEXFET Power MOSFET designed for various applications including motor drives, battery-powered circuits, and power supplies. It offers a drain-to-source breakdown voltage of 135V and a continuous drain current of up to 160A at 25°C case temperature.
Key electrical characteristics include a typical on-resistance of 4.7mΩ at 10V gate-to-source voltage and 96A drain current, and a gate threshold voltage ranging from 2.0V to 4.0V. The MOSFET also features improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability.
This component is characterized by its D2PAK-7 package, suitable for surface mounting. It is lead-free and halogen-free, complying with environmental standards. The device is fully characterized for capacitance and avalanche SOA, providing robust performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 135V.
The typical on-resistance is 4.7mΩ.
The continuous drain current is 160A at 25°C case temperature.
The IRF135SA204 is supplied in a D2PAK-7 package.
The standard package quantity is 800 units.
