| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF135B203 is an N-Channel power MOSFET from Infineon Technologies, part of the StrongIRFET family. It features a drain-source voltage of 135V and a continuous drain current of 129A at 25°C (91A at 100°C). The device has a typical on-resistance of 6.7 mΩ at Vgs=10V, with a maximum of 8.4 mΩ. It is designed for high-efficiency power conversion applications such as motor drives, battery-powered circuits, and synchronous rectification. The MOSFET is housed in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It is lead-free, RoHS compliant, and halogen-free. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 441W at Tc=25°C.
| Qty | Low | High |
|---|---|---|
| 49+ | $6.12 | $6.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
135V.
TO-220-3 (through-hole).
-55°C to 175°C (junction).
Yes, RoHS3 compliant.
129A.
6.7 mΩ at Vgs=10V.
2.0V to 4.0V at Id=250µA.