| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,491 pcs
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1491 pcs | On Request | 1 | On Request | On Request | 1613+ | On Request | On Request |
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The Infineon IRF1324STRL-7PP is a single N-Channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a drain-to-source breakdown voltage of 24V and a continuous drain current of 240A (package limited) or 429A (silicon limited) at Tc=25°C. The device offers a maximum on-resistance of 1mΩ (0.8mΩ typical) at Vgs=10V and Id=160A, enabling low conduction losses.
This MOSFET is optimized for synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched high-frequency circuits. It provides fully characterized capacitance and avalanche SOA, enhanced body diode dV/dt and dI/dt capability, and improved gate, avalanche, and dynamic dV/dt ruggedness.
The part is housed in a surface-mount D2PAK-7 (TO-263-7) package with 6 leads plus tab, allowing for efficient thermal dissipation. It supports a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 300W at Tc=25°C. The lead finish is lead-free (matte tin).
24V, minimum.
240A package limited (Tc=25°C), 429A silicon limited (Tc=25°C, Vgs=10V).
Maximum 1mΩ at Vgs=10V, Id=160A.
D2PAK-7 (TO-263-7), 6 leads plus tab, surface mount.
RoHS3 compliant, lead-free (matte tin finish).
300W at Tc=25°C.
-55°C to 175°C.