| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF1324SPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for a drain-source voltage of 24V and a continuous drain current of 195A (package limited) at 25°C, with a silicon-limited capability of 340A. The device offers a maximum on-resistance of 1.65 mΩ at Vgs=10V, with a typical value of 1.3 mΩ. Gate charge is 240 nC at 10V, and input capacitance is 7590 pF at 24V. Power dissipation is 300W at case temperature 25°C, with a junction-to-case thermal resistance of 0.5°C/W. The operating junction temperature range is -55°C to 175°C. The MOSFET is avalanche-rated with a single pulse avalanche energy of 270 mJ. It is housed in a D2PAK (TO-263) surface-mount package and is lead-free. Applications include high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high-speed power switching, and hard-switched or high-frequency circuits.
24V.
D2PAK (TO-263) surface-mount package.
-55°C to 175°C (junction temperature).
Yes, RoHS3 compliant (unverified).
195A (package limited) at 25°C; silicon limited to 340A at 25°C.
1.3 mΩ at Vgs=10V, Id=195A.
240 nC at Vgs=10V.