| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,405 pcs
|
2405 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1324PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications, offering a drain-to-source voltage of 24V and a continuous drain current of 195A (package limited) at 25°C. The device features a very low on-resistance of 1.5mΩ maximum (1.2mΩ typical) at V_GS=10V, enabling high current handling with minimal conduction losses.
This MOSFET is optimized for high-speed switching and synchronous rectification in switched-mode power supplies (SMPS). It has a maximum power dissipation of 300W at 25°C case temperature and a junction-to-case thermal resistance of 0.50°C/W. The device is rated for operating junction temperatures from -55°C to +175°C, making it suitable for demanding thermal environments.
The IRF1324PBF is available in a TO-220AB through-hole package, which is widely used in power electronics for its thermal performance and ease of mounting. The device is lead-free and RoHS3 compliant, supporting environmentally conscious designs.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched high-frequency circuits. The device also features improved gate, avalanche, and dynamic dV/dt ruggedness, enhancing reliability in harsh operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.70 | $3.70 |
| 50+ | $1.86 | $1.86 |
| 100+ | $1.68 | $1.68 |
| 500+ | $1.37 | $1.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 24V.
The maximum continuous drain current is 195A at T_C=25°C (package limited). The silicon-limited current is 353A at 25°C.
The maximum on-resistance is 1.5mΩ at V_GS=10V and I_D=195A. The typical value is 1.2mΩ.
The operating junction temperature range is -55°C to +175°C.
The IRF1324PBF is available in a TO-220-3 package (TO-220AB) with through-hole mounting.
The IRF1324PBF is marked as RoHS3 compliant, but this status is unverified. The datasheet indicates the part is lead-free.
The gate threshold voltage ranges from 2.0V (minimum) to 4V (maximum) at I_D=250µA.