| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1310NSTRLPBF is an N-channel enhancement mode MOSFET designed for high efficiency power switching applications. Manufactured by Infineon Technologies, this device features a drain-to-source voltage rating of 100V and a continuous drain current of 42A at case temperature (Tc). The on-resistance (Rds(on)) is typically 36mOhm maximum at 22A drain current and 10V gate drive.
The device has a gate threshold voltage of 4V maximum at 250µA drain current, and a maximum gate-source voltage rating of ±20V. Input capacitance is 1900pF at 25V Vds, and total gate charge is 110nC at 10V. These characteristics make it suitable for moderate frequency switching applications.
The MOSFET is offered in a TO-263-3 (D2PAK) surface mount package, which provides good thermal performance with a maximum power dissipation of 160W at case temperature (Tc) and 3.8W at ambient temperature (Ta). The operating junction temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.90 | $2.90 |
| 10+ | $1.87 | $1.87 |
| 50+ | $1.43 | $1.43 |
| 100+ | $1.29 | $1.29 |
| 800+ | $0.98 | $0.98 |
| 2,400+ | $0.87 | $0.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The device is available in a TO-263-3 (D2PAK) surface mount package.
The junction temperature range is -55°C to 175°C.
The RoHS status is marked as RoHS3 compliant, but this is unverified.
The maximum continuous drain current is 42A at case temperature (Tc).
The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.
The maximum on-resistance (Rds(on)) is 36mOhm at 22A drain current and 10V gate drive.