IRF1310NPBF IRF1310NPBF is an N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 42A drain current. It features 36mOhm maximum on-resistance and a TO-220AB through-hole package.
Mfr Part #:

IRF1310NPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF1310NPBF is an N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 42A drain current. It features 36mOhm maximum on-resistance and a TO-220AB through-hole package.
✓ Total Stock: 4,696 pcs
$ Price Range: $0.75 - $2.19

IRF1310NPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,356 pcs
2356 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,340 pcs
2340 pcs On Request 1 On Request On Request On Request On Request On Request

IRF1310NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF1310NPBF Description

Short technical summary and product information.

The IRF1310NPBF is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It delivers a drain-source voltage rating of 100V and continuous drain current of 42A at case temperature. The device features a maximum on-resistance of 36mOhm at 22A drain current and 10V gate drive. Input capacitance is 1900pF and gate charge is 110nC, supporting efficient switching in moderate frequency power conversion circuits. Maximum power dissipation is 160W with an operating junction temperature range of -55°C to 175°C. The part is housed in a TO-220AB through-hole package (TO-220-3) for easy heatsink mounting and thermal management. It is designated RoHS3 compliant and REACH unaffected per available data.

IRF1310NPBF Quick Information

Product Type: MOSFET
Canonical Name: IRF1310NPBF
Subcategory: Power MOSFET

IRF1310NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF1310NPBF Estimated Pricing

Qty Low High
1+ $2.19 $2.19
10+ $1.40 $1.40
50+ $1.05 $1.05
100+ $0.94 $0.94
500+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF1310NPBF Features

  • N-Channel enhancement mode power MOSFET.
  • 100V drain-source breakdown voltage.
  • 42A continuous drain current.
  • Low 36mOhm maximum on-resistance.
  • TO-220AB through-hole package.

IRF1310NPBF Applications

  • Power supply switching circuits.
  • DC-DC converter designs.
  • Motor drive control.
  • Battery protection systems.

IRF1310NPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of IRF1310NPBF?

100V.

What is the package type of IRF1310NPBF?

TO-220-3 (TO-220AB) through-hole.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is IRF1310NPBF RoHS compliant?

It is designated RoHS3 compliant based on available data, but the compliance is unverified.

What is the maximum drain current?

42A at case temperature.

What is the on-resistance?

36 mOhm maximum at 22A drain current and 10V gate drive.

What is the gate charge?

110 nC maximum at 10V gate-source voltage.

Home
Account

Categories