BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics IRF122 is an N-Channel enhancement mode silicon gate power field-effect transistor. It is designed to withstand a specified level of energy in the breakdown avalanche mode. This advanced power MOSFET features a Drain Source Voltage (VDSS) of 100V (minimum) and a continuous Drain Current (ID) of 7A at 25℃. The Static Drain-Source On-Resistance (RDS(on)) is a maximum of 0.4Ω, ensuring efficient power handling.
This MOSFET is suitable for applications requiring nanosecond switching speeds. It is housed in a TO-3 package and is designed for through-hole mounting.
Key applications include switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. Its robust design makes it a reliable component for demanding electronic systems.
| Qty | Low | High |
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V minimum.
TO-3 through-hole package.
7A at TC=25°C.
0.4Ω.
Nanosecond.