| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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35 pcs
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35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IRF122 is a bipolar junction transistor manufactured by N-A. It features a typical drain current of 7A under test conditions of 25℃ and a drain-source voltage of at least 100V. The device has a static drain-source on-resistance of maximum 0.4Ω and switching speeds in the nanosecond range. It is packaged in a TO-3 case suitable for through-hole mounting. This transistor is suitable for use in power switching, amplification, and other electronic circuits requiring high current handling and voltage capability. The package allows for robust mounting and heat dissipation, making it appropriate for various industrial and consumer applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF122 has a typical drain current of 7A at TC=25℃.
The drain-source voltage of the IRF122 is at least 100V.
The maximum static drain-source on-resistance is 0.4Ω.