| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 832 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1104L is a fifth-generation HEXFET Power MOSFET from Infineon Technologies, offering advanced processing for ultra-low on-resistance per silicon area. It is rated for a drain-source voltage of 40V and a continuous drain current of 100A at 25°C case temperature. The on-resistance is typically 9mOhm maximum under specified test conditions.
This device features fast switching speed and ruggedized design, including full avalanche rating up to 350mJ. It operates over a junction temperature range of -55°C to 175°C, allowing use in demanding environments. The through-hole TO-262 package (I²Pak, TO-262AA) provides low-profile mounting and excellent thermal performance.
Key specifications include an input capacitance of 2900pF and a total gate charge of 93nC at 10V drive. The gate threshold voltage is 4V maximum, and the maximum gate-source voltage is ±20V. The device can handle pulsed drain currents up to 400A and dissipates up to 170W at case temperature 25°C.
| Qty | Low | High |
|---|---|---|
| 50+ | $2.32 | $2.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
TO-262-3 Long Leads, I²Pak, TO-262AA (through hole).
-55°C to 175°C.
RoHS3 Compliant (unverified — conflict with distributor data).
100 A at Tc = 25°C (case temperature).
9 mOhm maximum at Id = 60A and Vgs = 10V.
2900 pF at Vds = 25V.