| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,148 pcs
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1148 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1018ESTRLPBF is an N-channel power MOSFET from Infineon's HEXFET family. It is rated for a drain-to-source voltage of 60V and a continuous drain current of 79A at a case temperature of 25°C, with a pulsed drain current rating of 315A. The maximum drain-to-source on-resistance is 8.4mΩ at Vgs=10V and Id=47A, with a typical value of 7.1mΩ.
This device is suited for high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high speed power switching, and hard-switched high frequency circuits. The low gate charge of 46nC typical and maximum input capacitance of 2290pF support high-frequency operation. The MOSFET also provides characterized avalanche ruggedness with a single pulse avalanche energy rating of 88mJ.
The device is supplied in a surface-mount D2PAK package (TO-263AB) and can operate at junction temperatures from -55°C to +175°C. Maximum power dissipation is 110W at 25°C case temperature, with a junction-to-case thermal resistance of 1.32°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.36 | $2.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 60V (minimum).
It is available in a TO-263-3 / D2Pak surface-mount package (TO-263AB).
The junction operating temperature range is -55°C to +175°C.
Existing data lists it as RoHS3 compliant, but this status has not been independently verified.
Continuous drain current is 79A at Tc=25°C and 56A at Tc=100°C with Vgs=10V.
Maximum Rds(on) is 8.4mΩ at Id=47A and Vgs=10V; typical is 7.1mΩ.
Total gate charge is 46nC typical and 69nC maximum at Id=47A, Vds=30V, Vgs=10V.