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IRF1018ESPBF N-Channel MOSFET with 60V drain-source voltage, 79A continuous drain current, and 8.4mOhm max on-resistance in D2PAK surface-mount package.
Mfr Part #:

IRF1018ESPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 60V drain-source voltage, 79A continuous drain current, and 8.4mOhm max on-resistance in D2PAK surface-mount package.
✓ Total Stock: 452 pcs

IRF1018ESPBF Available from 1 distributor

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✓ Non-Authorised
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452 pcs
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452 pcs On Request 1 On Request On Request 1037 On Request On Request
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IRF1018ESPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF1018ESPBF Description

Short technical summary and product information.

The IRF1018ESPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-to-source voltage rating of 60V and continuous drain current of 79A at Tc=25°C and 56A at Tc=100°C. The device offers low on-resistance with typical 7.1mOhm and maximum 8.4mOhm at VGS=10V and ID=47A. Gate threshold voltage ranges from 2.0V to 4.0V. Total gate charge is 46nC typical and 69nC maximum at VGS=10V. Input capacitance is 2290pF maximum at VDS=50V. The MOSFET is designed for high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching. It is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. Operating junction temperature range is -55°C to +175°C.

IRF1018ESPBF Quick Information

Product Type: MOSFET
Series: IRF1018E
Canonical Name: IRF1018ESPBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRF1018ESPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

IRF1018ESPBF Features

  • N-Channel 60V drain-source voltage rating.
  • 79A continuous drain current at 25°C.
  • Low on-resistance of 8.4mOhm max.
  • Standard gate threshold voltage 2-4V.
  • D2PAK surface mount package.

IRF1018ESPBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply designs.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRF1018ESPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss)?

60V.

What is the continuous drain current (Id) at Tc=25°C?

79A.

What is the typical on-resistance (Rds(on))?

7.1mOhm typical, 8.4mOhm maximum at VGS=10V and ID=47A.

What is the package type?

D2PAK (also known as TO-263).

What is the operating junction temperature range?

-55°C to +175°C.

What is the gate threshold voltage (Vgs(th)) range?

2.0V to 4.0V.

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