| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF1018EPBF is an N-Channel HEXFET Power MOSFET designed for high-efficiency applications. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of up to 79A at 25°C.
Key electrical characteristics include a low static drain-to-source on-resistance of 7.1mΩ typical and 8.4mΩ maximum at 47A. The gate threshold voltage ranges from 2.0V to 4.0V. Dynamic parameters such as input capacitance (Ciss) are 2290pF, output capacitance (Coss) are 270pF, and reverse transfer capacitance (Crss) are 130pF at 1MHz.
This MOSFET is suitable for applications such as high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits. It offers improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and avalanche SOA.
The component is housed in a TO-220 package with through-hole mounting. It operates across a junction and storage temperature range of -55°C to +175°C. The maximum power dissipation is rated at 110W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 79A at 25°C.
The drain-source breakdown voltage is 60V.
The typical static drain-to-source on-resistance is 7.1mΩ at 47A.
The IRF1018EPBF is supplied in a TO-220 package.
The operating junction and storage temperature range is -55°C to +175°C.
It is used for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching.