IRF1018EPBF IRF1018EPBF is an N-Channel Power MOSFET from Infineon with 60V drain-source breakdown voltage and 79A continuous drain current. It is housed in a TO-220AB through-hole package.
Mfr Part #:

IRF1018EPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF1018EPBF is an N-Channel Power MOSFET from Infineon with 60V drain-source breakdown voltage and 79A continuous drain current. It is housed in a TO-220AB through-hole package.
✓ Total Stock: 3,420 pcs
$ Price Range: $0.69 - $2.04

IRF1018EPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,420 pcs
3420 pcs On Request 1 On Request On Request On Request On Request On Request

IRF1018EPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF1018EPBF Description

Short technical summary and product information.

The IRF1018EPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It delivers a drain-source breakdown voltage of 60V (minimum) and supports a continuous drain current of 79A at 25°C case temperature. The device features a maximum drain-source on-resistance of 8.4mOhm at Vgs=10V and Id=47A.

 

Electrical characteristics include a gate threshold voltage range of 2V to 4V, typical input capacitance of 2290pF, and total gate charge of 46nC typical (69nC max). The MOSFET is rated for an operating junction temperature range of -55°C to 175°C and offers robust avalanche energy handling with a single pulse avalanche energy rating of 88mJ.

 

Packaged in a TO-220AB through-hole package, the IRF1018EPBF is suited for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching applications. Thermal resistance is specified at 1.32°C/W junction-to-case and 62°C/W junction-to-ambient.

IRF1018EPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRF1018EPBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF1018EPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF1018EPBF Estimated Pricing

Qty Low High
1+ $2.04 $2.04
10+ $1.30 $1.30
50+ $0.98 $0.98
100+ $0.87 $0.87
500+ $0.69 $0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF1018EPBF Features

  • N-Channel Power MOSFET with 60V Vdss.
  • Continuous drain current rating of 79A.
  • Low on-resistance of 8.4mOhm max.
  • TO-220AB through-hole package for easy mounting.
  • RoHS3 compliant and REACH unaffected.

IRF1018EPBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) circuits.
  • High speed power switching applications.
  • Hard switched and high frequency circuits.

IRF1018EPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF1018EPBF?

The minimum drain-source breakdown voltage is 60V.

What is the maximum continuous drain current for this MOSFET?

The continuous drain current is 79A at 25°C case temperature and 56A at 100°C case temperature.

What is the on-resistance of the IRF1018EPBF?

The typical drain-source on-resistance is 7.1mOhm and the maximum is 8.4mOhm at Vgs=10V and Id=47A.

What package type is the IRF1018EPBF available in?

It is available in a TO-220AB through-hole package.

What is the operating temperature range of the IRF1018EPBF?

The operating junction temperature range is -55°C to 175°C.

Is the IRF1018EPBF RoHS compliant?

The RoHS status is listed as RoHS3 Compliant but this data is unverified.

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