| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1010ZS is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 55V and a continuous drain current of 75A (package limited) or 94A (silicon limited). The device offers ultra-low on-resistance of 7.5mOhm maximum at Vgs=10V, enabling high efficiency in power conversion applications. With a maximum power dissipation of 140W and operating junction temperature range of -55°C to 175°C, it is suitable for demanding environments. The MOSFET is housed in a D2PAK (TO-263) surface mount package, which provides excellent thermal performance. It is lead-free and RoHS compliant (per manufacturer). Typical applications include DC-DC converters, motor drives, and power management systems.
| Qty | Low | High |
|---|---|---|
| 50+ | $2.17 | $2.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
75A (package limited at Tc=25°C) or 94A (silicon limited at Tc=25°C, Vgs=10V).
7.5mOhm maximum at Vgs=10V, Id=75A.
-55°C to 175°C (junction).
D2PAK (TO-263) surface mount package.
According to the manufacturer, it is RoHS3 compliant, but this is unverified.
2.0V minimum, 4.0V maximum.