| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,570 pcs
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2570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF1010ZPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family, designed for high-efficiency power conversion applications. It features a drain-source voltage rating of 55V and a continuous drain current of 75A at 25°C case temperature (silicon limited). The device achieves a typical on-resistance of 5.8mΩ and a maximum of 7.5mΩ at Vgs=10V and Id=75A, ensuring low conduction losses.
This MOSFET offers fast switching performance with a typical turn-on delay of 18ns and fall time of 92ns. The total gate charge is 63nC typical (95nC max) at Vgs=10V, and input capacitance is 2840pF at Vds=25V. The device can operate at junction temperatures up to 175°C, with a junction-to-case thermal resistance of 1.11°C/W.
The IRF1010ZPBF is housed in a TO-220-3 (TO-220AB) through-hole package, suitable for easy mounting on PCBs. It is lead-free and RoHS3 compliant, making it appropriate for environmentally sensitive designs.
The drain-source voltage (Vdss) is 55 V.
The continuous drain current is 75 A at Tc=25°C (silicon limited) and 360 A pulsed.
The typical on-resistance is 5.8 mΩ and maximum is 7.5 mΩ at Vgs=10V and Id=75A.
The operating junction temperature range is -55°C to 175°C.
It comes in a TO-220-3 (TO-220AB) through-hole package.
Yes, it is RoHS3 compliant and lead-free as verified by the datasheet.
The typical gate charge (Qg) is 63 nC, with a maximum of 95 nC at Vgs=10V.