| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1010Z is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage of 55V and a continuous drain current of 75A (package limited) or 94A (silicon limited). The device offers ultra-low on-resistance of 7.5 mΩ maximum at Vgs=10V, enabling high efficiency in power conversion applications.
With a maximum junction temperature of 175°C and fast switching characteristics, this MOSFET is suitable for demanding power management tasks. The total gate charge is 63 nC typical, and input capacitance is 2840 pF. It supports repetitive avalanche operation up to the maximum junction temperature.
The IRF1010Z is available in a TO-220AB through-hole package, with lead-free construction. It is designed for use in DC-DC converters, motor control, and other power switching applications.
| Qty | Low | High |
|---|---|---|
| 250+ | $1.70 | $1.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 55 V.
At Tc=25°C, the continuous drain current is 75 A (package limited) or 94 A (silicon limited). At Tc=100°C, it is 66 A.
The drain-to-source on-resistance (Rds(on)) is 5.8 mΩ typical and 7.5 mΩ maximum at Vgs=10V, Id=75A.
The operating junction temperature range is -55°C to 175°C.
The IRF1010Z is available in a TO-220-3 (TO-220AB) through-hole package.
The device is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The gate threshold voltage (Vgs(th)) is 2.0 V minimum and 4.0 V maximum at Vds=Vgs, Id=250µA.