| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,600 pcs
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9600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF1010NSPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the advanced HEXFET family. It is designed for high-efficiency power conversion and switching applications.
Key electrical specifications include a maximum drain-source voltage of 55V, a continuous drain current of 85A at 25°C case temperature, and a maximum drain-source on-resistance of 11mOhm at 43A and 10V gate drive. The device is fully avalanche rated with a maximum avalanche current of 43A and avalanche energy of 18mJ. It also features a peak diode recovery dv/dt rating of 3.6 V/ns.
The IRF1010NSPBF is housed in a D2PAK (TO-263) surface mount package, which provides low internal connection resistance and high power dissipation capability up to 180W. The operating junction temperature range is -55°C to 175°C. The device is lead-free and RoHS compliant.
The maximum drain-source voltage (Vdss) is 55V.
The continuous drain current is 85A at Tc=25°C with VGS=10V, and 60A at Tc=100°C.
The maximum drain-source on-resistance is 11mOhm at ID=43A and VGS=10V.
It comes in a D2PAK (TO-263-3) surface mount package.
The operating junction temperature range is -55°C to 175°C.
Yes, the datasheet indicates it is lead-free and RoHS compliant.