| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon Technologies IRF1010NS is an N-Channel MOSFET belonging to the single FET category. It is designed for power switching applications and features a maximum Drain-Source Voltage of 100V and a continuous Drain Current of 75A at 25°C.
This MOSFET has a low on-resistance, with a maximum Rds On of 0.0075 Ohm under typical test conditions (Vgs = 10V, Id = 25A). The gate charge is typically 110nC. It can handle pulsed drain currents up to 300A.
The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 150W at 25°C. It is suitable for surface mount applications.
Environmental compliance includes RoHS3 compliance, REACH unaffected status, and a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the IRF1010NS is 100V.
The continuous Drain Current for the IRF1010NS is 75A at 25°C.
The Rds On for the IRF1010NS is a maximum of 0.0075 Ohm under Vgs = 10V and Id = 25A conditions.
The operating temperature range for the IRF1010NS is -55°C to 175°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.