| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | 822 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1010EZLPBF is an N-Channel enhancement-mode Power MOSFET utilizing HEXFET technology from Infineon Technologies. It is designed for high-efficiency power conversion applications requiring low conduction losses. The device delivers a continuous drain current of 75A (package limited) at TC=25°C and 84A (silicon limited), with a maximum drain-to-source voltage of 60V. Static drain-to-source on-resistance is typically 6.8 mΩ and a maximum of 8.5 mΩ at VGS=10V and ID=51A. The gate threshold voltage ranges from 2V minimum to 4V maximum. The device supports fast switching with a total gate charge of 58 nC typical and 86 nC maximum. It offers single pulse avalanche energy capability tested to 180 mJ. Input capacitance is 2810 pF maximum. The operating junction temperature range is -55°C to 175°C, enabling robust performance in demanding environments. The package is a through-hole TO-262 (I²Pak). Thermal resistance junction-to-case is 1.11 °C/W maximum.
| Qty | Low | High |
|---|---|---|
| 3,200+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 60 V minimum at VGS=0V and ID=250µA.
The continuous drain current is 75 A (package limited) or 84 A (silicon limited) at TC=25°C with VGS=10V. At TC=100°C, it is 60 A.
The static drain-to-source on-resistance is typically 6.8 mΩ and a maximum of 8.5 mΩ at ID=51A and VGS=10V.
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates the device is lead-free. The RoHS status in the database is listed as RoHS3 Compliant but is unverified. Verify with the manufacturer for full RoHS certification.