| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,220 pcs
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8220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF1010ESTRLPBF is an N-Channel power MOSFET part of the HEXFET family, manufactured by Infineon Technologies (originally International Rectifier). It is designed for high-efficiency power management applications requiring low conduction losses. This MOSFET is rated for a maximum drain-to-source voltage of 60V and a continuous drain current of 84A at 25°C, with a pulsed drain current capability of 330A. The maximum on-resistance is 12mΩ at 10V gate drive and 50A drain current. The device offers fast switching performance and is fully avalanche rated. It operates over a junction temperature range of -55°C to 175°C. The IRF1010ESTRLPBF is supplied in a surface-mount D2PAK (TO-263) package, suitable for high-current applications where space is limited. The part is lead-free and RoHS compliant. Typical applications include DC-DC converters, motor drives, power supplies, and other power management circuits. The device has a total gate charge of 130nC and input capacitance of 3210pF, making it suitable for moderate frequency switching. With a thermal resistance of 0.75°C/W junction-to-case, efficient heat dissipation can be achieved with proper PCB layout.
60V.
D²Pak (TO-263) surface-mount package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
Maximum 12 mΩ at 50A, 10V gate drive.
84A at 25°C with 10V gate-to-source voltage.
Maximum total gate charge is 130 nC at 10V.