| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,487 pcs
|
1487 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1010EPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 84A at 25°C case temperature (59A at 100°C). The device offers an ultra-low maximum on-resistance of 12 milliohms at VGS=10V and ID=50A, enabling high efficiency in power conversion systems.
Electrical characteristics include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 130 nC, and fast switching speeds with typical turn-on delay of 12ns and rise time of 78ns. The device is fully avalanche rated with an avalanche current capability of 50A and repetitive avalanche energy of 17mJ. It also features a peak diode recovery dv/dt rating of 4.0 V/ns.
The MOSFET is housed in a standard TO-220-3 (TO-220AB) through-hole package, suitable for commercial and industrial applications requiring power dissipation up to 200W. Thermal characteristics include a junction-to-case thermal resistance of 0.75°C/W and an operating junction temperature range from -55°C to 175°C. The device is lead-free and designated RoHS3 compliant (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
| 10+ | $1.25 | $1.25 |
| 50+ | $0.94 | $0.94 |
| 100+ | $0.84 | $0.84 |
| 500+ | $0.66 | $0.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF1010EPBF is offered in a TO-220-3 (TO-220AB) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum drain-source voltage (Vdss) is 60V.
84A at 25°C case temperature and 59A at 100°C case temperature.
The maximum on-resistance is 12 milliohms at VGS=10V and ID=50A.
The gate threshold voltage ranges from 2.0V to 4.0V at ID=250µA.
The product is listed as RoHS3 Compliant, but this status is unverified.