| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,195 pcs
|
1195 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
356 pcs
|
356 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The Infineon IRF100S201 is a high-performance N-channel Power MOSFET designed for various applications including motor drives, battery-powered circuits, and power supplies. It offers a drain-source breakdown voltage of 100V and a typical on-resistance of 3.5mΩ at a gate-source voltage of 10V and a drain current of 115A.
This MOSFET boasts improved gate, avalanche, and dynamic dV/dt ruggedness, along with fully characterized capacitance and avalanche SOA. The body diode also features enhanced dV/dt and dI/dt capability. It is lead-free, RoHS compliant, and halogen-free.
The IRF100S201 is available in two package types: the through-hole TO-220AB, supplied in tubes of 50, and the surface-mount D2-Pak, supplied on tape and reel in quantities of 800. Its robust design makes it suitable for demanding applications requiring reliable power switching.
Key electrical characteristics include a gate threshold voltage typically around 2V and a low drain-to-source leakage current of 20µA at 100V.
The drain-to-source breakdown voltage is 100V.
The typical static drain-to-source on-resistance is 3.5mΩ.
The gate threshold voltage is typically 2V.
It is available in TO-220AB and D2-Pak packages.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.