TC7SH00FUTE85L,JF
Toshiba
The Toshiba TC7SH00FUTE85L,JF is a logic gate IC. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Vishay Dale IRF100B201 is a high-performance N-channel HEXFET Power MOSFET. It offers improved gate, avalanche, and dynamic dV/dt ruggedness, along with fully characterized capacitance and avalanche SOA.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (V(BR)DSS) of 100V, a typical Static Drain-to-Source On-Resistance (RDS(on)) of 3.5mΩ at 10V gate-to-source voltage and 115A drain current, and a Gate Threshold Voltage (VGS(th)) ranging from 2.0V to 4.0V.
This MOSFET is suitable for applications such as brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, and DC/DC converters. It is available in TO-220AB and D2-Pak packages.
The device is lead-free, RoHS compliant, and halogen-free, indicating its adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.02 | $4.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage is 100V.
The typical Static Drain-to-Source On-Resistance is 3.5mΩ.
The Gate Threshold Voltage ranges from 2.0V to 4.0V.
It is available in TO-220AB and D2-Pak packages.
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
