Mfr Part #:

IRF100B201

Mfr Name: Infineon

The IRF100B201 from Infineon is an N-Channel MOSFET designed for various power management applications. It features a 100V Drain-to-Source Breakdown Voltage and a maximum On-Resistance of 4.2mΩ.

✓ Total Stock: 34,368 pcs

$ Price Range: $4.02

IRF100B201 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	14,132 pcs On Request	14132 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	13,020 pcs On Request	13020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	6,216 pcs On Request	6216 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF100B201 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Halogen Free	true
Mounting Type	Through Hole
Tape & Reel	Yes

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IRF100B201 Description

Short technical summary and product information.

The IRF100B201 is an N-Channel MOSFET manufactured by Infineon. This component is characterized by its 100V Drain-to-Source Breakdown Voltage (V(BR)DSS) and a typical Static Drain-to-Source On-Resistance (RDS(on)) of 3.5mΩ, with a maximum of 4.2mΩ when tested at VGS = 10V and ID = 115A.

Further electrical characteristics include a typical Gate Threshold Voltage (VGS(th)) of 2V, with a maximum of 4V, and a maximum Drain-to-Source Leakage Current (IDSS) of 20µA. The device also exhibits a typical Gate Resistance (RG) of 2.2Ω and a maximum Gate-to-Source Forward Leakage (IGSS) of 100nA. It is capable of handling a maximum silicon-limited drain current (ID) of 192A.

This MOSFET is available in a TO-220AB package, which is suitable for through-hole mounting. It is also offered in a D2-Pak package with tape and reel packaging. The IRF100B201 is Lead Free and Halogen Free, indicating its compliance with certain environmental standards.

IRF100B201 Quick Information

Product Type: MOSFET

Canonical Name: IRF100B201 N-Channel MOSFET

Subcategory: FETs, MOSFETs - Single

IRF100B201 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: true

IRF100B201 Estimated Pricing

Qty	Low	High
1+	$4.02	$4.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF100B201 Features

100V Drain-to-Source Breakdown Voltage.
Maximum 4.2mΩ Static Drain-to-Source On-Resistance.
Typical 2V Gate Threshold Voltage.
Maximum 192A Silicon-Limited Drain Current.
Available in TO-220AB and D2-Pak packages.

IRF100B201 Applications

Suitable for brushed motor drives
Used in BLDC motor drives
For battery powered circuits
Used in half/full-bridge topologies
Ideal for synchronous rectifier applications

IRF100B201 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the Drain-to-Source Breakdown Voltage of the IRF100B201?

The Drain-to-Source Breakdown Voltage (V(BR)DSS) of the IRF100B201 is a minimum of 100V, measured at VGS = 0V, ID = 250µA.

What is the typical and maximum Static Drain-to-Source On-Resistance of the IRF100B201?

The typical Static Drain-to-Source On-Resistance (RDS(on)) is 3.5mΩ, and the maximum is 4.2mΩ, both measured at VGS = 10V, ID = 115A.

What is the Gate Threshold Voltage for the IRF100B201?

The Gate Threshold Voltage (VGS(th)) is typically 2V and has a maximum of 4V, measured at VDS = VGS, ID = 250µA.

What is the maximum Drain-to-Source Leakage Current for the IRF100B201?

The maximum Drain-to-Source Leakage Current (IDSS) is 20µA, measured at VDS = 100V, VGS = 0V.

What is the typical Gate Resistance of the IRF100B201?

The typical Gate Resistance (RG) is 2.2Ω.

What is the maximum silicon-limited drain current for the IRF100B201?

The maximum silicon-limited drain current (ID) for the IRF100B201 is 192A.

What are the available package types for the IRF100B201?

The IRF100B201 is available in TO-220AB and D2-Pak package types.