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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRC644 is a general-purpose power MOSFET featuring an N-channel configuration. It is designed for switching applications and built with Metal-Oxide Semiconductor (MOS) FET technology.
Key electrical specifications include a minimum breakdown voltage of 250V and a maximum drain current of 14A. The maximum drain-source on-resistance is 0.28 Ohms. This MOSFET operates in enhancement mode and has a silicon transistor element.
The component is housed in a TO-220, 5-pin package with a flange mount. The terminals are tin copper with a through-hole termination style. It is lead-free and RoHS3 compliant.
This power MOSFET is suitable for various industrial automation and process automation applications requiring reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the Vishay Dale IRC644 is 250V.
The IRC644 MOSFET has a maximum drain current of 14A.
The maximum drain-source on-resistance for the Vishay Dale IRC644 is 0.28 Ohms.
The IRC644 uses Metal-Oxide Semiconductor FET technology.
The Vishay Dale IRC644 is supplied in a TO-220, 5-pin package.
The Vishay Dale IRC644 is RoHS3 Compliant.