| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRC540PBF is an N-Channel MOSFET manufactured by Vishay Dale. It is designed for through-hole mounting in a TO-220-5 package. Key electrical specifications include a drain-to-source voltage (Vdss) of 100V, a continuous drain current (Id) of 28A at 25°C case temperature, and a maximum on-resistance (Rds(on)) of 77mOhm at 17A drain current and 10V gate drive. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current, and the maximum gate-source voltage is ±20V. The device features a current sensing FET structure, which allows for monitoring of load current. The input capacitance (Ciss) is 1300pF at 25V drain-source voltage, and the total gate charge (Qg) is 69nC at 10V gate voltage. Maximum power dissipation is 150W at 25°C case temperature, and the operating junction temperature range is -55°C to 175°C. The device is listed as RoHS3 compliant (unverified) and has an MSL of 1 (unlimited). This MOSFET is suitable for applications requiring high efficiency and current sensing, such as power supplies, motor control, and load switching.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.21 | $1.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 175°C (junction temperature).
Through-hole TO-220-5 package.
The component is listed as RoHS3 Compliant, but this is unverified.
100V.
28A at 25°C case temperature.
77 mOhm maximum at 17A drain current and 10V gate drive.
Yes, it features a current sensing FET structure.