| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRC530PBF is an N-Channel MOSFET manufactured by Vishay Dale. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current of 14A at 25°C case temperature. The device has a maximum on-resistance of 160mOhm at 8.4A drain current and 10V gate drive.
Key electrical characteristics include a maximum gate threshold voltage of 4V at 250µA drain current, a maximum gate charge of 26nC at 10V, and a maximum input capacitance of 700pF at 25V drain-source voltage. The recommended drive voltage is 10V, and the maximum gate-source voltage is ±20V. The MOSFET also includes a current sensing feature.
Thermal characteristics include a maximum power dissipation of 88W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. The device is mounted through hole and is housed in a TO-220-5 package, which also serves as the supplier device package.
| Qty | Low | High |
|---|---|---|
| 50+ | $1.72 | $1.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 14A at case temperature 25°C.
The device is offered in a TO-220-5 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate charge is 26 nC at Vgs = 10V.