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3,150 pcs
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3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR4427PBF is a low voltage, high-speed dual low-side gate driver. It is constructed using proprietary latch-immune CMOS technologies for rugged monolithic construction. The device operates with a gate drive supply range from 6V to 20V and provides an output current of 2.3A to 3.3A. Its logic inputs are compatible with standard CMOS or LSTTL outputs.
This gate driver features matched propagation delays for both channels and non-inverting input types. It is suitable for driving IGBTs and N-channel MOSFETs. The operating temperature range is -40°C to 150°C (TJ), making it suitable for demanding applications. The IR4427PBF comes in an 8-DIP package and is designed for through-hole mounting.
Key electrical characteristics include a logic voltage range of 0.8V to 2.7V, rise times of 10ns to 15ns, and fall times around 65ns. The device offers a high pulse current buffer stage designed for minimum driver cross-conduction. The datasheet also specifies absolute maximum ratings and recommended operating conditions for robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.86 | $2.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IR4427PBF operates with a supply voltage from 6V to 20V. The absolute maximum supply voltage is -0.3V to 25V.
The IR4427PBF is available in an 8-DIP (0.300", 7.62mm) through-hole package, also referred to as 8-PDIP.
The junction temperature range is -40°C to 150°C, and the ambient operating temperature range is -40°C to 125°C.
The IR4427PBF has 2 independent gate driver channels.
The IR4427PBF can source and sink 1.5A per channel typical. The datasheet also lists a range of 2.3A to 3.3A, likely under different test conditions.
The typical rise time is 10ns to 15ns, and the typical fall time is 65ns.
The IR4427PBF is designed to drive IGBTs and N-Channel MOSFETs.