| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR4426SPBF is a low voltage, high-speed dual low-side gate driver designed for N-Channel MOSFET and IGBT applications. It features a gate drive supply range from 6V to 20V, CMOS Schmitt-triggered inputs, and matched propagation delays for both channels. The device offers peak output currents of 1.5A and is housed in a compact 8-SOIC surface mount package.
This driver is built using proprietary latch-immune CMOS technologies, ensuring ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers are designed with a high pulse current buffer stage to minimize driver cross-conduction. The IR4426 variant has outputs out of phase with inputs.
Key electrical characteristics include a supply voltage range of 6V to 20V and peak output currents of 1.5A. The operating temperature range is -40°C to 150°C (TJ). The 8-SOIC package is suitable for surface mounting, with dimensions of 0.154 inches (3.90mm) width.
This component is suitable for various power switching applications where precise and fast gate driving is required for low-side power devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 6V to 20V.
The ambient temperature range is -40°C to 125°C.
It is available in an 8-SOIC surface-mount package.
The peak output current is 1.5A (source and sink).
Typical propagation delays are 85ns (turn-on) and 65ns (turn-off).
Maximum power dissipation is 0.625W at 25°C ambient.
Junction-to-ambient thermal resistance is 200°C/W.