| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,086 pcs
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1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
970 pcs
|
970 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IR25606STRPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It is designed for half-bridge configurations and operates with independent high and low side referenced output channels.
Key electrical specifications include a high side voltage capability of up to 600V, a gate drive supply range of 10V to 20V, and peak output currents of 200mA for source and 350mA for sink. The device offers typical rise and fall times of 150ns and 50ns respectively. Logic input compatibility is supported for voltages down to 3.3V, with specific logic input voltage ranges of 0.8V and 2.9V.
This driver operates within a temperature range of -40°C to 150°C (TJ). It is housed in an 8-SOIC package with surface mount mounting type. The IR25606STRPBF is suitable for driving N-channel power MOSFETs or IGBTs in high-side configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The maximum high-side bootstrap voltage is 600V.
It is available in an 8-SOIC surface-mount package.
The junction temperature range is -40°C to 150°C.
It provides two independent driver channels.
It can drive IGBTs and N-channel MOSFETs.
The peak output current is 200mA and 350mA.