| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Type | |
| Halogen Free | |
| High Side Voltage | |
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| Voltage |
The IR2233J from Infineon Technologies is a gate driver integrated circuit featuring a half-bridge driven configuration. It is designed to drive IGBT and N-Channel MOSFET gates, offering a high side voltage capability of 1200V.
This device operates within a voltage range of 10V to 20V and supports 3-phase channel types. It includes 6 drivers with inverting input types. The operating temperature range is specified up to 125°C (TJ).
Packaged in a 44-PLCC with 32 leads, the IR2233J is designed for surface mounting. Its electrical characteristics include logic voltages of 0.8V and 2V, and current ratings of 250mA and 500mA. Rise times are noted as 90ns and 40ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature is 125°C (TJ).
The IR2233J is supplied in a 44-LCC (J-Lead), 32 Leads package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The high side voltage is 1200V.
The IR2233J can drive IGBT and N-Channel MOSFET gates.
The voltage range is 10V to 20V.