| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,200 pcs
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3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,834 pcs
|
1834 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2213SPBF is a high voltage, high speed power MOSFET and IGBT driver designed for applications requiring independent high and low side referenced output channels. This device is fully operational to +1200 V and is tolerant to negative transient voltage, with dV/dt immunity.
Key electrical specifications include a gate drive supply range from 12 V to 20 V and a separate logic supply range from 3.3 V to 20 V. It supports 3.3 V logic compatibility and features undervoltage lockout for both channels. The output drivers provide a high pulse current buffer stage with matched propagation delays for high-frequency applications. The floating channel can drive an N-channel power MOSFET or IGBT in the high-side configuration.
Packaged in a 16-SOIC (0.295", 7.50mm Width) surface mount package, the IR2213SPBF is suitable for various power management applications. It operates within a temperature range of -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high-side floating supply voltage is 1225 V.
The operating temperature range is -55°C to 150°C (TJ).
The IR2213SPBF is supplied in a 16-SOIC package.
The gate drive supply voltage range is from 12 V to 20 V.
The separate logic supply range is from 3.3 V to 20 V.
The typical propagation delay matching is 30 ns.
The output current rating is 1.7 A / 2 A.