| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
364 pcs
|
364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2184STRPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It features dependent high and low side referenced output channels, with a floating channel capable of operating up to 600V. This device is designed for bootstrap operation and is tolerant to negative transient voltage and dV/dt immune.
The gate drive supply range is from 10V to 20V, and it includes undervoltage lockout for both channels. The logic input is compatible with standard CMOS or LSTTL output down to 3.3V logic. The output drivers provide a high pulse current buffer stage for minimum driver cross-conduction, with an output source/sink current capability of 1.4A/1.8A.
This gate driver is available in an 8-SOIC package and is suitable for surface mount applications. It operates within an ambient temperature range of -40°C to 150°C (TJ). The IR2184STRPBF is also available in a lead-free version.
Key electrical characteristics include a high side voltage of 600V, a gate drive supply voltage of 10V to 20V, and logic voltage compatibility down to 0.8V/2.7V. It offers an output current range of 1.9A to 2.3A and propagation delays of 20ns to 40ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The maximum high side voltage is 600V.
The output current range is 1.9A to 2.3A.
The operating junction temperature range is -40°C to 150°C.
The IR2184STRPBF is available in an 8-SOIC surface mount package.
It can drive IGBTs and N-Channel MOSFETs.
The driven configuration is half-bridge.