| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,383 pcs
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1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IR2184S is a high-speed, high-voltage gate driver IC designed for half-bridge applications. It supports N-channel MOSFET and IGBT gate driving with a fully operational capability up to 600V.
Key electrical specifications include a gate drive supply range of 10V to 20V and logic voltage compatibility down to 3.3V. The device offers an output current capability of 1.9A sourcing and 2.3A sinking, with rise times of 20ns and 40ns. It is designed with undervoltage lockout for both channels and is tolerant to negative transient voltage.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the IR2184S operates within an ambient temperature range of -40°C to 150°C (TJ). This component is suitable for power management applications requiring robust and efficient gate driving.
This driver utilizes proprietary HVIC and latch immune CMOS technologies for rugged monolithic construction. Its matched propagation delay and lower di/dt gate driver enhance noise immunity, making it a reliable choice for demanding power electronic designs.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The junction temperature range is -40°C to 150°C.
The IR2184S is available in an 8-SOIC surface-mount package.
The output current is 1.9A typical source and 2.3A typical sink.
The high-side voltage rating is 600V.
The IR2184S can drive IGBTs and N-Channel MOSFETs.