| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The IR2183STRPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It is designed for half-bridge applications and features dependent high and low side referenced output channels. The device utilizes proprietary HVIC and latch immune CMOS technologies for rugged monolithic construction.
Key electrical specifications include a gate drive supply range of 10 to 20V, with a high side voltage capability of up to 600V. The logic input is compatible with standard CMOS or LSTTL outputs down to 3.3V. Output drivers provide a source/sink current capability of 1.4A/1.8A, with rise times of 20ns and 40ns. The operating temperature range is -40°C to 150°C (TJ).
This gate driver is housed in an 8-SOIC package and is suitable for surface mount applications. It is designed for driving N-channel power MOSFETs or IGBTs in a high-side configuration, offering improved noise immunity due to its lower di/dt gate driver.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.51 | $2.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage ranges from 10V to 20V. The high side voltage is 600V.
The junction operating temperature range is from -40°C to 150°C.
The IR2183STRPBF is available in an 8-SOIC package, specifically an 8-SOIC (0.154", 3.90mm Width) for surface mounting.
The output current is 1.4A or 1.9A for sourcing and 1.8A or 2.3A for sinking.
The IR2183STRPBF has 2 independent drivers.
It can drive IGBTs and N-Channel MOSFETs.
The typical rise times are 20ns and 40ns.