| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,450 pcs
|
7450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2181S from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, built with proprietary HVIC and latch immune CMOS technologies for rugged monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs down to 3.3V logic.
Key electrical specifications include a gate drive supply range of 10 to 20V, an output source/sink current capability of 1.4A/1.8A, and a high side voltage rating of 600V. The device supports half-bridge driven configurations and is suitable for IGBT and N-Channel MOSFET gate driving.
This component is housed in an 8-SOIC package with surface mount mounting type. It operates within a temperature range of -40°C to 150°C (TJ). The IR2181S is designed for applications requiring robust and efficient gate driving capabilities in power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10V to 20V.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-40°C to 150°C (junction temperature).
1.4A source and 1.8A sink peak current.
600V.
Two independent drivers.
IGBTs and N-channel MOSFETs.