| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Supplier Package | |
| Voltage |
The Infineon Technologies IR21814STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, designed for bootstrap operation and fully operational to +600V. The device is tolerant to negative transient voltage and is dV/dt immune.
This gate driver IC supports a gate drive supply range from 10V to 20V and features undervoltage lockout for both channels. It is compatible with 3.3V and 5V input logic. The output drivers provide a high pulse current buffer stage for minimum driver cross-conduction, with an output source/sink current capability of 1.4A/1.8A. The floating channel can drive an N-channel power MOSFET or IGBT in a high-side configuration.
The IR21814STRPBF is housed in a 14-SOIC package with surface mount mounting type. It operates within a temperature range of -40°C to 150°C (TJ). The part number IR21814SPBFTR-ND is also associated with this component.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.76 | $2.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply voltage range is 10V to 20V.
The device comes in a 14-SOIC surface-mount package.
The junction temperature range is -40°C to 150°C.
The driver can source 1.4A and sink 1.8A.
The high-side voltage maximum is 600V.
It features two independent drivers.
It is designed for IGBT and N-Channel MOSFET gates.