IR21531DPBF The Infineon Technologies IR21531DPBF is a half-bridge gate driver IC designed for MOSFETs. It operates with a supply voltage range of 10V to 15.6V and features a high-side voltage rating of 600V.
Mfr Part #:

IR21531DPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IR21531DPBF is a half-bridge gate driver IC designed for MOSFETs. It operates with a supply voltage range of 10V to 15.6V and features a high-side voltage rating of 600V.
✓ Total Stock: 6,080 pcs
$ Price Range: $2.01

IR21531DPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
2,080 pcs
2080 pcs On Request 1 On Request On Request On Request On Request On Request

IR21531DPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Channel Type
Driven Configuration
Duty Cycle
Gate Type
Halogen Free
High Side Voltage
Industrial Grade
Input Type
Medical Grade
Military Grade
Mounting Type
Number of Channels
Number of Drivers
Operating Temperature
Power
Rise
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Turn Off Time
Turn On Time
Voltage

IR21531DPBF Description

Short technical summary and product information.

The Infineon Technologies IR21531DPBF is an integrated half-bridge gate driver IC with a front-end oscillator, similar to a CMOS 555 timer. It is designed to drive N-channel MOSFETs and offers a high-side voltage capability of 600V.

 

This device operates within a supply voltage range of 10V to 15.6V and features a typical deadtime of 0.6µs. Key electrical characteristics include a rise time of 80ns and a fall time of 40ns, with a typical duty cycle of 50%. It includes features like a shutdown function on the CT pin and improved noise immunity.

 

The IR21531DPBF is housed in an 8-DIP (0.300", 7.62mm) through-hole package, making it suitable for various power management applications. The operating temperature range is -40°C to 125°C (TJ).

 

This IC provides a robust solution for applications requiring efficient half-bridge driving, incorporating features for stable startup and enhanced latch immunity.

IR21531DPBF Quick Information

Product Type: Gate Driver IC
Canonical Name: Infineon Technologies IR21531DPBF Half-Bridge Gate Driver IC
Subcategory: MOSFET/IGBT Drivers

IR21531DPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IR21531DPBF Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IR21531DPBF Features

  • Integrated 600V half-bridge gate driver.
  • Operates from 10V to 15.6V supply.
  • Features 80ns rise and 40ns fall times.
  • Housed in an 8-DIP through-hole package.
  • Wide -40°C to 125°C operating temperature.

IR21531DPBF Applications

  • Suitable for half-bridge power circuits.
  • Used in power supply designs.
  • Ideal for motor control applications.
  • Applicable in lighting ballasts.

IR21531DPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the supply voltage range of the IR21531DPBF?

The IR21531DPBF operates with a supply voltage from 10V to 15.6V.

What is the maximum high-side voltage rating?

The maximum high-side voltage is 600V.

What is the operating temperature range?

The operating junction temperature range is -40°C to 125°C.

What package does the IR21531DPBF come in?

The IR21531DPBF is available in an 8-DIP (0.300", 7.62mm) through-hole package.

What are the switching times of the IR21531DPBF?

The typical turn-on time is 80ns and the typical turn-off time is 40ns.

Does the IR21531DPBF have built-in deadtime?

Yes, it has a typical deadtime of 0.6µs.

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