| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,898 pcs
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6898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2131J from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver IC. It provides three independent high-side and three low-side referenced output channels, making it suitable for half-bridge driven configurations.
Key electrical specifications include a gate drive supply range of 10V to 20V and a high side voltage capability of up to 600V. The device is designed for robust operation, featuring undervoltage lockout for all channels and an over-current shutdown function that turns off all six drivers. Logic inputs are compatible with 2.5V logic.
This gate driver is available in a 44-PLCC surface mount package. Its design incorporates proprietary HVIC technology for rugged monolithic construction. Matched propagation delays simplify use in high-frequency applications, and outputs are out of phase with inputs.
The IR2131J is designed for applications requiring efficient control of power transistors in high-voltage environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 10V to 20V.
The operating temperature range is -40°C to 150°C (junction temperature).
The IR2131J is available in a 44-lead PLCC (J-Lead) surface mount package with 32 active leads.
The IR2131J has 6 independent driver channels.
The IR2131J can drive IGBTs and N-channel MOSFETs.
The high side voltage rating is 600V.
The output source current is 250mA and sink current is 500mA.