| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,001 pcs
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2001 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The IR2130STRPBF from Infineon Technologies is a high voltage, high speed power MOSFET and IGBT driver. It integrates three independent high and low side referenced output channels, utilizing proprietary HVIC technology for rugged monolithic construction.
Key electrical specifications include a maximum offset voltage of 600V, a gate drive supply range of 10 to 20V, and logic inputs compatible with CMOS or LSTTL down to 2.5V. The device offers matched propagation delays for high-frequency applications and includes features like undervoltage lockout for all channels and over-current shutdown.
This driver is available in multiple package types: 28-Lead PDIP, 28-Lead SOIC, and 44-Lead PLCC. The floating channels are designed for bootstrap operation and can drive N-channel power MOSFETs or IGBTs in high-side configurations up to 600 volts.
Applications for the IR2130STRPBF include motor control, power supplies, and industrial automation where robust and high-speed gate driving is required.
The low side logic supply voltage (VCC) range is 10V to 20V. The high side floating supply voltage (VB) can go up to 625V.
The IR2130STRPBF is available in 28-Lead PDIP, 28-Lead SOIC, and 44-Lead PLCC packages.
The output current is ±200 mA sink and ±420 mA source.
The deadtime is 2.5 µs typical for IR2130.
The device is 2.5V logic compatible.
Typical turn on time is 675 ns and turn off time is 425 ns.
The maximum junction temperature is 150°C.